Abstract
LiNbO3-type ZnSnO3 single crystal thin films are deposited on LiTaO3(0001) substrates by pulsed laser deposition, and then an annealing process is carried out at a higher temperature. The 700°C-deposited film with a full width at half-maximum of ∼316 arcsec for the ZnSnO3(0006)-plane X-ray rocking curve has the highest crystal quality, whereas the 800°C-annealed film is partially decomposed. The epitaxial relationship between the highest quality film and the substrate is identified as ZnSnO3(0001) || LiTaO3(0001) with ZnSnO3[21‾1‾0] || LiTaO3<21‾1‾0 >. The hexagonal structure of the ZnSnO3 thin film shows slightly shrunken a-lattice and c-lattice constants. The average transmittance of the sample prepared at 700 °C in the visible light range is ∼79%, and the optical band gap of the film is about 3.90 eV. Due to high transmittance, wide bandgap and high crystal quality, the ZnSnO3 thin film should have wide application potential in optoelectronic devices.
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