High-purity single photon emitter in aluminum nitride photonic integrated circuit

Abstract

Efficient, on-demand, and robust single photon emitters (SPEs) are important to a wide varity of applications in quantum information processing [1]. Over the past decade, color centers in solid-state systems have emerged as excellent SPEs [2] and have also been shown to provide optical access to internal spin states at room and cyogenic temperatures. Color centers in diamond [3] and silicon carbide [4] are among the most intensively studied SPEs. Recently, other cost-efficient wide-bandgap materials have become attractive as potential host materials. Theoretical calculations show that aluminum nitride (AlN) with a bandgap of 6.015 eV can serve as a stable environment for well isolated SPEs with optically accessible spin states [5].