Abstract
Large-aperture biased photoconductive emitters which can generate high-power narrow-band terahertz (THz) radiation are developed. These emitters avoid saturation at high fluence excitation and achieve enhanced peak power spectral density by employing a thick layer of short-lifetime low-temperature-grown GaAs (LT-GaAs) photoconductor and multiple-pulse excitation. THz waveforms are calculated from the saturation theory of large aperture photoconductors, and a comparison is made between theory and measurement. A direct comparison of the multiple-pulse saturation properties of THz emission from semi-insulating GaAs and LT GaAs emitters reveals a strong dependence on the carrier lifetime. In particular, the data demonstrate that saturation is avoided only when the interpulse spacing is longer than the carrier lifetime.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
