Abstract
High performance of newly developed InGaAsP P-substrate buried crescent (PBC) laser diodes is described. It is shown that the PBC laser has superior characteristics to the conventional buried crescent (BC) laser with n-InP substrate. The maximum output power of 140 mW under a CW condition is realized at room temperature. CW light output power of 10 mW up to 110°C is achieved. A maximum CW temperature of 135°C is obtained. Stable CW operations have been confirmed in 70°C 5-mW and 70°C 20-mW aging tests. The reason for the high performance is discussed in relation to the leakage current which flows through the current blocking layers.
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