Abstract
A molybdenum silicide (MoSi) film deposited on a quartz substrate offers major advantages as a high-performance photomask material for VLSI fabrication. There is no missing pattern due to exfoliation after ultrasonic cleaning with a frequency of 28 kHz and 300 W of power, and after being scrubbed over fifteen cycles with a high-pressure water jet. Reflectivity and optical density of the MoSi film are not affected by acidic chemicals. Dry etching with CF 4 + O 2 gas plasma can be performed at a rate of 70 nm/min, which is about five times as fast as the etch rate for chromium (Cr) masks. Moreover fabrication of submicron patterns using poly(buten-1 sulfone) (PBS) resist, a positive electron beam resist with very poor resistance to dry etching, has been realized. In addition a photomask with a MoSi film is easier to repair by focused ion beam than one with a Crfilm because of the higher sputter yields for a MoSi film.
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