High-performance UV light detector using layered perovskites and textured silicon heterojunction

Abstract

UV photodetectors have gained popularity due to their high precision and capability to filter out interference from solar electromagnetic radiation. A UV detector of (BA)2PbCl4/textured silicon (BA = n-butylammonium) heterojunction was fabricated by depositing (BA)2PbCl4 thin film on textured silicon. High performances of a rapid UV light response (trise = tfall = 0.24 s), high responsivity (8.16 mA/W), and a low detection limit (7.5 μW/cm2) were obtained from the designed detector, which were ascribed the unique morphology and structure of the detector. The rough surface morphology of textured silicon enlarges the light-absorbing area of (BA)2PbCl4 by 20 times. Moreover, a p-n junction was constructed between (BA)2PbCl4 and textured silicon. The electric field naturally present in the heterojunction facilitates the transport of carriers. Furthermore, the (BA)2PbCl4/textured silicon heterojunction exhibited significant selectivity towards UV light and demonstrated remarkable stability and repeatability in the air environment. This work offers a new strategy for developing inexpensive and high-performance UV photodetectors, which is significant for exploring the potential of layered perovskites in new photodetector device applications.