High-Performance, sub-2 volts TiO2 thin film transistors enabled by ultrathin ZrO2 gate dielectrics

Abstract

We report on, for the first time, high-performance, sub-2 volts TiO 2 thin film transistors (TFTs) enabled by ultrathin ZrO 2 gate dielectrics. The effect of ZrO 2 thickness on TFT performance is systematically studied. It is found that the TFT performances are enhanced with the reduced ZrO 2 thickness, benefiting from the increased gate oxide capacitance $(\mathrm{C}_{\text{ox}})$ . The TiO 2 TFTs with an ultrathin ZrO 2 dielectric of 5 nm show a high $\mathrm{I}_{\text{on}}/\mathrm{I}_{\text{off}}$ of $7.7\times 10^{7}$ and a nearly ideal SS of 72 mV under an ultra-low voltage of 2 V. The highperformance, sub-2 volts TiO 2 TFTs show great promise for future portable electronic applications.