Abstract
Abstract Novel wide-bandgap piezoelectric semiconductor materials, with wurtzite structure, set a great impetus to research, which outreach the promising applications in optoelectronic devices, wearable electronic devices and medical monitoring systems. Here, we studied the piezotronic effect of p-ZnO NW films under strain which were suitable for self-powered tactile sensors. Typically, the doping level was 2 × 1017 cm−3 at the 2% Sb doping in solution. Based on different devices design, it was verified that the piezoelectric charges induced by applied strain could significantly affect the charge carrier separation and transport at the interface/junction. For p-ZnO NW thin film devices, the negative piezoelectric charge reduces Schottky barrier height, while the positive piezoelectric charge increases it. Self-powered strain sensors were then developed based on the changes of piezoelectric potential under different strain, which have a potential candidate for applications in man-machine interaction interface and biomedical sciences.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
