Abstract
The authors report a room temperature operating InAs quantum-dot infrared photodetector grown on InP substrate. The self-assembled InAs quantum dots and the device structure were grown by low-pressure metal-organic chemical vapor deposition. The detectivity was 2.8×1011cmHz1∕2∕W at 120K and a bias of −5V with a peak detection wavelength around 4.1μm and a quantum efficiency of 35%. Due to the low dark current and high responsivity, a clear photoresponse has been observed at room temperature, which gives a detectivity of 6.7×107cmHz1∕2∕W.
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