Abstract
A high uniformity of sheet resistance was achieved in the double-channel (DC) Al 0.82In 0.18N/GaN heterostructure by lowering the interface roughness scattering effect. The variation of the AlInN/GaN interface roughness as a key factor influenced the uniformity of the sheet resistance. In the DC heterostructure, the distribution of the two dimension electron gas (2DEG) was modified to reduce interface roughness scattering effect. As a result, the uniformity of the sheet resistance was enhanced, and the nonuniformity of the sheet resistance in the DC Al 0.82In 0.18N/GaN could be reduced to 0.7% after structure optimization.
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