Abstract
We report on the modeling of polarization-induced two-dimensional electron gas (2DEG) formation at ε-AlGaO3/ε-Ga2O3 heterointerface and the effect of spontaneous polarization (Psp) reversal on 2DEG density in ε-Ga2O3/ε-AlGaO3/ε-Ga2O3 double heterostructures. Density-functional theory (DFT) is utilized to calculate the material properties of ε-Ga2O3 and ε-AlGaO3 alloys. Using Schrödinger–Poisson solver along with DFT calculated parameters, the 2DEG density is calculated as a function of barrier type and thickness. By optimizing the layer thicknesses of ε-Ga2O3/ε-AlGaO3/ε-Ga2O3 heterostructures, charge contrast ratios exceeding 1600 are obtained. This computational study indicates the high potential for ε-Ga2O3-based heterostructure devices for non-volatile memories and neuromorphic applications.
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