Abstract
The formation of two-dimensional electron gases (2DEGs) at polytypic (hexagonal/cubic) SiC heterojunctions (4H/3C SiC and 6H/3C SiC) is investigated by numerical self-consistent solutions of the Schrödinger and Poisson equations. The free-electron-density distributions and conduction-band profiles in the SiC heterostructures are calculated and compared to those occurring at AlGaN/GaN interfaces. Spontaneous and piezoelectric polarization effects in both SiC/SiC and AlGaN/GaN structures are taken into account. The combined effect of the polarization-induced bound charge and conduction-band offset between the hexagonal and cubic SiC polytypes results in the formation of 2DEGs with very high electron sheet concentration. 2DEG sheet densities about 20% larger than that in Al0.3Ga0.7N/GaN structures are calculated for 4H/3C SiC heterostructures. We also find that the 2DEG densities in the 4H/3C are much less sensitive to variations of the barrier layer thickness. The influence of the barrier doping layer on the 2DEG densities is also investigated.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
