Abstract
Zn0.86Cd0.11In0.03O alloy semiconductor film was deposited on quartz substrate by pulsed laser deposition technique. Cd is used to change the optical band gap and In is used to increase the carrier concentration of the ZnO film. XRD studies confirm that the structure of Zn0.86Cd0.11In0.03O is hexagonal wurtzite structure without CdO phase appeared. FE-SEM shows that the grain size of Zn0.86Cd0.11In0.03O film is smaller than that of ZnO. These films are highly transparent (∼85%) in visible region. Most importantly, the electrical properties of Zn0.86Cd0.11In0.03O film highly improved with In doped. It has low resistivity (4.42×10−3 Ω cm) and high carrier concentration (5.50×1019 cm−3) that enable this film a promising candidate for window layer in solar cells and other possible optoelectronic applications.
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