Highly stacked InGaAs quantum dot structures grown with two species of As

Abstract

The authors describe successful formation of highly stacked InGaAs quantum dot (QD) structures grown with molecular beam epitaxy. 100-stack InGaAs QDs are grown without using any strain compensation technique or any degradation in crystal quality. InGaAs QDs are aligned in the growth direction and tend to align in the QD plane. As2-grown multistack InGaAs QD structures have superior optical properties to As4-grown structures at a high growth rate of 1μm∕h, whereas the opposite is true at a lower growth rate. The highest and narrowest photoluminescence spectrum is observed in a highly stacked InGaAs QD structure grown with an As2 source and a high growth rate.