Abstract
Abstract Memristive devices based on cesium-lead-chlorine (CsPbCl3) perovskite quantum dots (PQDs) embedded in a poly(methyl methacrylate) (PMMA) layer were fabricated to enhance their memory stability. Current-voltage (I-V) measurements on Al/PQDs embedded in PMMA layer/indium-tin-oxide devices at 300 K showed nonvolatile rewritable memristive behaviors. The maximum ON/OFF ratio of the current bistability for the devices was as large as 2 × 104. The retention time for the devices was above 1 × 104 s, indicative of high stability of the device. The operating mechanisms of the devices related to the interaction between the PQDs and the PMMA matrix could be explained by adjusting the thickness of the active layer. Furthermore, the carrier transport mechanisms of the devices are described on the basis of the I-V results with the aid of the energy-band diagram. The carrier transport could be attributed to the space-charge-limited-current mechanism in the high resistance state and to Ohmic conduction in the low resistance state.
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