Abstract
A highly stable fluorine-passivated In–Ga–Zn–O (IGZO) thin-film transistor (TFT) was demonstrated under positive gate bias and temperature stress (PBTS). The defects in the IGZO TFT were passivated by fluorine, which was introduced into a SiOx etching stopper during the deposition of fluorinated silicon nitride for passivation and diffused during post-fabrication annealing. From the results of secondary ion mass spectrometry analysis, the reliability of the IGZO TFT under PBTS was observed to be markedly improved even at a stress temperature of 100 °C when fluorine diffusion was detected in the IGZO channel. The fluorine-passivated IGZO TFT has improved operation temperature and is advantageous for achieving high-performance and high-reliability oxide TFTs for next-generation displays.
Published Version
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