Abstract

Rapid and real-time hydrogen sulfide (H2S) detection in human blood or plasma is required as it has physiological and pathophysiological relations with human health. An ultrasensitive field-effect transistor (FET) using a layered transition metal dichalcogenides is demonstrated to detect dissolved H2S in plasma. The biosensor effectively utilizes a few layers of MoSe2 as a channel material for the FET device. The fabricated biosensor exhibited the highest response of 78 at the lowest H2S concentration of 1 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{M}$ </tex-math></inline-formula> and a wide linear dynamic range (between 1 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{M}$ </tex-math></inline-formula> and 1 mM). With the lowest detection limit of 1 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{M}$ </tex-math></inline-formula> , the fabricated biosensor is appropriate for quick and real-time detection of H2S in plasma for point-of-care applications. In the concentration range of 1–100 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{M}$ </tex-math></inline-formula> , the FET device shows linear change in its drain current and the threshold voltage. However, the fabricated device is still a proof of concept and could open new technological avenues for directly detecting all the forms of free sulfide in plasma with rapid, real-time, and stable sensing performance for point-of-care applications.

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