Abstract
Graphene–semiconducting light absorber hybrid photodetectors have attracted increasing attention because of their ultrahigh photoconductive gain and superior sensitivity. However, most graphene-based hybrid photodetectors reported previously have shown a relatively long response time (on the order of seconds) caused by numerous long-lived traps in these hybrid systems, which greatly restricts device speed. In this work, graphene–thieno[3,4-b]thiophene/benzodithiophene polymer hybrid photodetectors fabricated on self-assembled-monolayer (SAM)-functionalized SiO2 substrates are demonstrated with a maximum responsivity of ∼1.8 × 105 A W–1 and a relatively short photocurrent response time of ∼7.8 ms. The fast and highly sensitive device characteristics provide great potential in low-light imaging applications. The hybrid photodetector on the SAM-coated SiO2 substrate shows better performance in responsivities and response times as compared with those of the device on the bare SiO2 substrate. The improved resp...
Published Version
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