Abstract
Highly sensitive silicon-nanonet biologically active field-effect transistors (BioFETs) for the detection of influenza A (H1N1) virus have been demonstrated using a top-down process. The BioFETs show excellent intrinsic electrical characteristics, such as a low threshold voltage of 0.7 V and high on/off current ratio of ~107. The sensing characteristics were measured at room temperature with various concentrations of H1N1 virus in a range of 10 pg/ml - 100 ng/ml. The current-related sensitivity ( ${S}_{ {I}}$ ) shows a higher value in the subthreshold regime, where ${S}_{ {I}}$ is strongly correlated with the subthreshold swing ( SS ). The voltage-related sensitivity ( ${S}_{ {V}}$ ) shows almost constant behavior from the subthreshold regime to the linear regime. The limit of detection (LOD) was 10 pg/ml, which is 6 times lower than values previously reported for FET-type sensors. In addition, the nanonet sensors exhibit high specificity to influenza A virus with negligible false positive for influenza B virus.
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