Abstract
The highly sensitive detection of peanut allergens (PAs) using silicon-based electrolyte-gated transistors (Si-EGTs) was demonstrated. The Si-EGT was made using a top-down technique. The fabricated Si-EGT showed excellent intrinsic electrical characteristics, including a low threshold voltage of 0.7 V, low subthreshold swing of <70 mV/dec, and low gate leakage of <10 pA. Surface functionalization and immobilization of antibodies were performed for the selective detection of PAs. The voltage-related sensitivity (SV) showed a constant behavior from the subthreshold regime to the linear regime. The current-related sensitivity (SI) was high in the subthreshold regime and then significantly decreased as the drain current increased. The limit of detection (LOD) was calculated to be as low as 25 pg/mL based on SI characteristics, which is the lowest value reported to date in the literature for various sensor methodologies. The Si-EGT showed selective detection of PA through a non-specific control test. These results confirm that Si-EGT is a high-sensitivity and low-power biosensor for PA detection.
Highlights
The low gate leakage current indirectly confirms the high quality of the gate oxide and successful formation of SU-8 passivation
ID is exponentially proportional to VG in the subthreshold regime (VG < VTH ) and has a linear dependency in the linear regime (VG > VTH ), as follows [32]: ID_SUB ∼ exp[
We demonstrated the highly sensitive detection of peanut allergens (PAs) using Si-based electrolyte-gated
Summary
The highly sensitive detection of peanut allergens (PAs) using silicon-based electrolytegated transistors (Si-EGTs) was demonstrated. The fabricated Si-EGT showed excellent intrinsic electrical characteristics, including a low threshold voltage of 0.7 V, low subthreshold swing of
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