Abstract
A chemically amplified negative working resist, TDUR-N9 (Tokyo Ohka) for KrF excimer laser (248 nm) lithography, has been investigated for use in synchrotron radiation (SR) lithography. The resist shows high sensitivity and high resolution in SR lithography. Lines and spaces down to 0.1 µm are delineated at an exposure dose of 50 mJ/cm2. This high sensitivity will enable high-throughput SR lithography. In addition, the resist stress is less than 1 MPa, which is much smaller than those of other commercially available resists. It is found that this characteristic is essential for prevention of pattern deformation in pattern replication of around 0.1 µm.
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