Abstract
The etch rates of GaInAs and AlInAs were characterized using a mixture of methane, hydrogen, and argon as a function of self-bias voltage. Effectively infinite etch selectivity between GaInAs and AlInAs was found for voltages below 200 V. This highly selective etch process was applied to the gate recess of a high electron mobility transistor device, and preliminary device measurements were made.
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More From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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