Highly selective photoelectrochemical etching of nitride materials for defect investigation and device fabrication

Abstract

Photoenhanced electrochemical (PEC) etching in an unstirred KOH solution under He–Cd laser illumination was used for delineating extended defects in GaN films. When a low-excitation intensity was employed, the process yielded threading vertical features at dislocation sites. Application of an external voltage or a higher-illumination intensity led to high-etch rates with smooth surfaces. Some highly resistive samples, for which no etching was obtained under normal etching conditions, could be etched with the application of a single-polarity external voltage. Finally, in a GaN sample with an AlN/GaN superstructure inside, high selectivity between AlN and GaN was achieved; in this case, the PEC process stopped at the thin AlN stop layer.