Highly robust asymmetrical 9T SRAM with trimode MTCOS technique

Abstract

Memory design is the most complex part of any electronic devices. There are many parameters either intrinsic or extrinsic effects the system. In the memory design some features should be focus like stability, leakage current and delay. These parameters play important role in terms of performance. There is a lot of degradation in performance while not using the system. In this paper we used MTCMOS tech for optimizing parameters like stability static power dissipation and delay. We characterized the parameters of conventional 6T, Asym8T Asym 9T. The main focus is on the Asym 9T because it had low static power dissipation low delay and high stability. We simulated Asym 9T on different values of the threshold values and β values. Asym 9T SRAM cell exhibits high stability with dual threshold voltage.