Abstract
The fabrication of high resolution patterns on InP-substrates by focused ion beam implantation and selective wet chemical etching has been investigated. InP acts as positive resist for Ga+ focused ion beam exposure and development by HF. The values of contrast and sensitivity have been determined to 12 and 1.5×1013 cm-2, respectively. By this technique short period line gratings with a linewidth of 30 nm have been fabricated.
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