Highly resistive CH-doped GaN grown by plasma-assisted metalorganic chemical vapor deposition

Abstract

Highly resistive (≳106 Ω cm) GaN thin films were grown on (0001) sapphire substrates by plasma-assisted metalorganic chemical vapor deposition using triethylgallium and N radicals. Considerable amounts of C and H were incorporated in the GaN films and the incorporated C was electrically inactive after annealing in N2 up to 900 °C, suggesting that thermally stable CH complex made the GaN films highly resistive. The C concentrations were reduced when the Ga and N sources were alternately supplied.