Abstract
In this letter, a threshold switching (TS) selector with Ag doping-based nano-polycrystalline ZnO switching layer (SL) having (002) preferred orientation has been manifested, without incorporating an active Ag metal layer, using a facile co-sputtering deposition technique. The TS selectors with extremely controlled doping of ~0.14 at. % Ag concentration showed remarkable electroforming (EF)-free selection behavior such as gigantic selectivity (~1011), extreme-low off-current (~10 fA), high on-current density (~1.6 MA/cm2), ultra-steep switching slope (~0.8 mV/decade), satisfactory endurance (>106), fast switch-on speed (~38 ns) and relaxation speed (~64 ns), and high device yield (~90%). Furthermore, selector devices showed reproducible selection behavior with stable threshold voltage (Vth) having merely 8% variances.
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