Abstract
An advanced bottom electrode contact (BEC) was successfully developed for reliable high-density 256 Mb phase-change random access memory (PRAM) using a ring-type contact scheme. This advanced ring-type BEC was prepared by depositing very thin TiN films inside a contact hole, after which core dielectrics were uniformly filled into the TiN-deposited contact hole. Using this novel contact scheme, it was possible to reduce reset current while maintaining a low set resistance and a uniform cell distribution. Thus, it has been clearly demonstrated that the use of the ring-type contact technology is very feasible for high-density PRAM beyond 256 Mb.
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