Abstract

Despite the fact that monocrystalline germanium (Ge) was historically the first material where formation of laser-induced periodic surface structures (LIPSSs) was observed in 1965 and then extensively studied, practically relevant thin films of amorphous Ge (a-Ge) were occasionally ignored by these studies so far. Here, highly regular LIPSSs were observed on the surface of magnetron-sputtered a-Ge films under near-IR femtosecond laser exposure. Formation of these regular structures was explained by excitation and interference of the surface waves at the interface of photoexcited Ge that was confirmed by performed calculations and full-wave simulations. At the same time, remarkable structural regularity of these LIPSSs unveiled their ablation-free formation scenario involving laser-driven oxidation of the Ge followed by ultra-clean sublimation of the oxide. Laser patterning in vacuum was found to regulate oxidation/sublimation rates of the a-Ge and its oxide improving the structure quality and opening pathways for practical applications in optoelectronics, solar light harvesting and near-IR photonics.

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