Abstract
Au Schottky diodes have been fabricated on highly oriented diamond (HOD) films, grown on silicon using AC-bias nucleation and microwave plasma chemical vapor deposition. The active layers were selectively grown and doped by solid boron source. High rectification ratios were obtained up to 500/spl deg/C in a bias voltage range up to /spl plusmn/15 V. A current density of more than 1 A/cm/sup 2/ and a breakdown field strength up to 2.0/spl middot/10/sup 6/ V/cm for point contacts has been demonstrated.
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