Abstract
ABSTRACT This research developed a simple method for bismuth vanadate (BiVO4) thin film using an automatic dip-coating method. A precursor solution concentration, dipping speed, and calcination temperature were optimized to obtain the highest photoelectrocatalytic (PEC) BiVO4 electrode for water oxidation. The BiVO4 electrode was applied to organic dye degradation and studied the catalytic mechanism at the electrode surface. A calcination temperature of 450 °C was optimized for BiVO4 photoanode preparation for the highest PEC water oxidation and had good charge transfer process properties. The proposed automatic dip-coating method presents high efficiency for the large scale of BiVO4 electrode fabrication, and it was highly reproducible at a low relative standard deviation of less than 5%. The developed BiVO4 electrode can eliminate methyl red organic dyes by more than 70% within 1 hour. This research offers a new alternative approach for a simple, convenient, reproducible, and scaled-up method for semiconductor thin film fabrication.
Published Version
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