Abstract
Highly X-axis-oriented tantalum pentoxide (Ta 2 O 5 ) piezoelectric thin films were deposited on a SiO 2 substrate using an RF-magnetron sputtering system with a metal tantalum target and an O 2 -radical source. The degree of orientation and the Rayleigh-type surface acoustic wave properties were evaluated. When the SiO 2 substrate temperature was 700°C and the O 2 flow rate was 10 ccm, the coupling factor K2 of the oriented Ta 2 O 5 thin film with a normalized thickness h/λ of 0.21 was measured to be 0.88% and was about 3/4 of that for the previously obtained thin film using a DC-diode sputtering system. In the deposition on Si(100), a higher orientation was observed. Moreover, for the 1st mode of the Rayleigh-type SAW on the Ta 2 O 5 /MgO(100), the K2 of 1.42% and the phase velocity of 5,126 m/s were obtained for the normalized thickness h/λ of 0.225.
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