Abstract
X-axis-oriented tantalum pentoxide (Ta2O5) piezoelectric thin films were deposited on Si using an RF magnetron sputtering system with the aim of obtaining a film bulk acoustic resonator (FBAR) structure. First, the degree of orientation and the coupling factor K2 for the surface acoustic wave were evaluated. The K2 of the first mode of the Ta2O5 thin film deposited on the unprocessed Si(100) was almost the same as that of the zeroth mode of the Ta2O5 thin film/SiO2 glass substrate for a similar thickness. However, the K2 of the Ta2O5 thin film deposited on a silicon oxide layer formed on the Si was small because the (200) plane spacing slightly increased. Then, a process in which the Ta2O5 thin film itself was used as an etch stop layer was adopted and an FBAR structure was fabricated. The resonance response corresponding to a longitudinal bulk wave was observed.
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