Abstract
In this work, we proposed a strategy to improve the damp-heat stability and weak-acid resistance of gallium doped zinc oxide (GZO) thin films by co-doping TiO2 into GZO targets. Results showed that GZO thin films with a 0.2wt% TiO2 co-doping in the target (GTZO) exhibited a resistivity of 5.1×10−4Ω·cm and an average transmittance of 82.9%. The relative change in sheet resistance was as low as 5.1% after 24h damp heat treatment in conditions of 97% relative humidity at 121°C. A craterlike textured surface with a high haze value was not found in GTZO thin films after dipping in 1vol% HCl solution for 10min. These results showed that GTZO thin films have great potential for use as transparent electrode in extreme outdoor conditions.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
