Abstract
We report on heterojunction diodes prepared by exfoliation and direct mechanical transfer of a p-type InSe thin film onto an n-type InAs epilayer. We show that despite the different crystal structures and large lattice mismatch (∼34%) of the component layers, the junctions exhibit rectification behaviour with rectification ratios of ∼104 at room temperature and broad-band photoresponse in the near infrared and visible spectral ranges.
Highlights
We report on heterojunction diodes prepared by exfoliation
Heterostructures made by mechanical exfoliation
a van der Waals (vdW) semiconductor with electronic properties that are unprecedented within the wide family of vdW crystals
Summary
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