Abstract
Both n- and p-type diluted magnetic semiconductor ZnCoO are made by magnetron co-sputtering with, respectively, dopants of Al and dual dopants of Al and N. The two sputtering targets are compound ZnCoO with 5% weight of Co and pure metal Al. Sputtering gases for n- and p-type films are pure Ar and N 2, respectively. These films are magnetic at room temperature and possess free electron- and hole-concentration of 5.34×10 20 and 5.27×10 13 cm −3. Only the n-type film exhibits anomalous Hall-effect signals. Magnetic properties of these two types of films are compared and discussed based on measurements of microstructure and magneto-transport properties.
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