Highly enhanced and stable field emission performance of CNT – Dielectric (Si3N4) hybrids

Abstract

In the present study, vertically aligned carbon nanotubes (CNTs) were grown onto Si substrates using a simple thermal chemical vapour deposition (TCVD) technique. Subsequently, the dielectric layer of Si3N4 was coated over the pristine CNTs using the Plasma Enhanced CVD (PECVD) method. Various characterizations were carried out on the as-deposited samples to study the structural properties, surface morphology, elemental composition, and electronic structure. The field emission measurements executed on CNT – Si3N4 samples showed an enhanced current density of 8.28 mA/cm2 compared to the 2.85 mA/cm2 current density of the pristine CNTs. A detailed study reveals that, apart from the basic conventional field emission parameters, the electronic structure of the CNTs, along with the presence of disordered carbon atoms and the presence of the dielectric material, are responsible for enhancing the current density and temporal stability of the CNT – Si3N4 hybrids. The study aids in exploring CNT-dielectric hybrids for better field emission properties with improved stability for field emission applications.