Abstract

The carbon nanotubes (CNTs) samples are grown using the microwave plasma chemical vapor deposition (MPCVD) and thermal chemical vapor deposition (THCVD) technique on Fe catalyst deposited by thermal evaporation on silicon substrate. The field emission measurements of the samples have been made in a diode assembly at room temperature in a vacuum chamber with a base pressure of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">−7</sup> mbar. The turn-on fields of CNT films grown by THCVD and MPCVD techniques are 0.6 and 1.0 V/μm, respectively.

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