Abstract

Self-powered photodetectors attracted significant attention due to their ability to convert light signals into electrical signals without an external power source. Tin Selinide (SnSe) is a promising candidate for self-powered photodetector owing to its unique combination of high carrier mobility, narrow bandgap, and strong light absorption in the near-infrared region, which makes SnSe well-suited for many different devices and systems. However, the long-term stability of SnSe-based optoelectronic devices is not explored till now. Its unstable nature is an obstacle to commercialization purpose. This report used a thermally grown SnSe film to develop an air-stable, self-powered, and broadband photodetector with excellent figure-of-merits. The two terminal SnSe-based photodetector demonstrated an excellent performance like responsitivity (860 mAW−1 /260 mAW−1) and noise equivalent power (4.81 × 10−12 WHz−1/2 /1.56 × 10−11 WHz−1/2) for the infrared /visible light illumination in the self-powered mode. In addition, under 0.8 V applied bias, the developed device displayed a peak responsivity of 5240 and 2140 mAW−1 under light illumination of 1064 and 532 nm, respectively. Inherent air-stable, low-cost-processing broadband and self-powered feature of SnSe-based optoelectronic device enable new avenues for the futuristic application.

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