Abstract
We study injection GaAs-based microdisk lasers capable of operating at room and elevated temperatures. A novel type of active region is used, namely InGaAs quantum well-dots representing a dense array of indium-rich islands formed inside an indium-depleted residual quantum well by metalorganic vapor phase epitaxy. We demonstrate a high output power of 18mW, a differential efficiency of about 31%, and a peak electrical-to-optical power conversion efficiency of 15% in a 31μm diameter microdisk laser. The continuous-wave lasing is observed up to 110°C.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
