Abstract
Chemical bath deposited Zn-compound buffer layers have been applied as an alternative to the CdS buffer layer in the development of Cu(In,Ga)(S,Se) 2 (CIGSSe) thin film solar cells. We used CIGSSe absorbers developed by Shell Solar for large-scale production. When ZnO is sputtered directly on such absorbers, very poor performances are obtained. In contrast, when the CIGSSe films are treated in electrolyte containing Zn-ions before sputtering, device efficiency of 12% is achieved. Including a sulfur or selenium source, we have developed a process to fabricate Cd-free CIGSSe devices with over 14% efficiency, certified at NREL. The structure and composition of the CBD-ZnSe on CIGSSe surface were investigated. The growth mechanism of chemical bath deposited ZnSe and ZnS on CIGSSe are discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
