Highly efficient 3C-SiC photocathodes with texture structures formed by electrochemical etching

Abstract

Listen

Translate article

We fabricated texture structures on the 3C-SiC surface for improvement of photocathode performance by electrochemical etching. After the electrochemical etching, surface roughness of 3C-SiC increased without point defect introduction because of preferential etching at stacking faults and dislocations in 3C-SiC. The roughness enhanced optical absorption of the photocathodes, while the roughness also had effects on formation of Pt cocatalyst on 3C-SiC surface. When we applied the optimum etching and Pt deposition condition, applied bias photon-to-current conversion efficiency (ABPE) of 2.0% was obtained. This ABPE is the highest value compared with reported efficiencies for SiC photoelectrodes so far.