Highly doped galnAs using diethylberyllium by MOCVD for InP-based heterostructure bipolar transistor applications

Abstract

Diethylberyllium has been used to produce high hole concentrations in latticematched Galnas grown by metalorganic chemical vapor deposition (MOCVD). Doping concentrations from p = 1 × 1019 up to 7.7 × 1019 cm−3 have been achieved at 500°C. To our knowledge, this is the highest doping level achieved by MOCVD in this material system. Secondary ion mass spectroscopy analysis showed a significant inclusion of oxygen in the as-grown material. Using beryllium-doped Galnas as the base layer, we have demonstrated InP-based heterostructure bipolar transistors. This shows diethylberyllium to be a promising p-type dopant for MOCVD applications.