Abstract
Although high-quality SnO 2 films have been prepared above 400°C, we prepared highly-conductive transparent F-doped SnO 2 films below about 350°C and at high growth rates, using a new raw material system of Sn(CH 3) 4, O 2 containing 5 mol.% O 3, and HF-acid. At a substrate temperature of 350°C, the films, which had properties such as sheet resistances of 1.6 and 4.5 Ω/□, resistivities of 3.4 and 4.5 × 10 −4 Ωcm, and transmittances including substrates of 70% and 80% at 550 nm, were prepared by thermal-CVD and photo-CVD (chemical vapour deposition), respectively. Several optical and electrical properties of the films prepared by both CVD methods were compared.
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