Abstract
Degenerately doped ZnO is seen as a potential substitute to the ubiquitous and expensive Sn doped In2O3 as a transparent electrode in optoelectronic devices. Here, highly conductive and transparent Ga doped ZnO thin films were grown via aerosol assisted chemical vapor deposition. The lowest resistivity (7.8 × 10−4 Ω.cm) and highest carrier concentration (4.23 × 1020 cm−3) ever reported for AACVD grown ZnO: Ga was achieved due to using oxygen poor growth conditions enabled by diethylzinc and triethylgallium precursors.
Highlights
Doped Zinc oxide (ZnO) is seen as a potential substitute to the ubiquitous and expensive Sn doped In2O3 as a transparent electrode in optoelectronic devices
Gallium doped ZnO thin films were produced on glass substrates via Aerosol assisted chemical vapor deposition (AACVD) at 450 °C by using a toluene solution of ZnEt2 and GaEt3 with methanol as the oxygen source
From the optoelectronic results presented above, it is clear that the low resistivity and optical enhancements of the ZnO films presented in this study are essentially due to increase in carrier concentration as a result of donor doping with Ga3+
Summary
Doped ZnO is seen as a potential substitute to the ubiquitous and expensive Sn doped In2O3 as a transparent electrode in optoelectronic devices. Such doping results in shallow donor states below the ZnO conduction band minima that are ionized at room temperature to increase carrier concentration and reduce electrical resistivity. The AACVD synthesized films in this study showed ZnO:Ga with 7.9 × 10−4 Ω.cm resistivity and >80% visible light transmittance.
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