Enhancement of efficiency in dye-sensitized solar cell using spray deposited Ga doped ZnO thin films

Abstract

Gallium doped Zinc Oxide thin films have been deposited by means of spray pyrolysis technique onto preheated glass substrates using Gallium (III) acetyl acetonate as precursor for Ga ions. The effect of Ga doping on the structural, morphological and optical properties of sprayed Ga doped ZnO thin films were investigated using X-ray diffraction, Scanning electron microscopy, and Optical absorption techniques. The films are crystalline with hexagonal (wurtzite) crystal structure with preferential orientation along (002) plane. From SEM studies it is confirmed that the grains were distributed randomly. The average transparency in the visible range was found to be 70 %. The Gallium doped ZnO thin film has been deposited above the Indium Tin Oxide (ITO) coated glass substrate. Bromophenol and platinum coated ITO substrate were used as the photo sensitizer and counter electrode, respectively. The efficiency of the obtained DSSC measured by sensitizing for 12 h was found to be η = 0.44, 0.50 and 0.60 % for every increase in doping of Gallium concentrations which can be utilized for the application of Dye-Sensitized Solar Cell.