Highly compatible and reliable ZrN interfacial layer between TiN top electrode and antiferroelectric ZrO2 thin film to boost the electrocaloric behavior

Abstract

A highly compatible and reliable ZrN interfacial layer with different cycles of atomic layer deposition was inserted between the TiN top electrode and antiferroelectric (AFE) ZrO2 thin film to achieve low oxygen vacancies and high crystallinity of the ZrO2 thin film, boosting the AFE and electrocaloric (EC) characteristics of TiN/ZrO2/TiN metal–insulator–metal (MIM) capacitors. An outstanding adiabatic temperature change (ΔT) of − 21 K was realized for devices with a ZrN interfacial layer of nine cycles, which can be ascribed to the reduction in redox between the TiN and ZrO2 for the suppression of interfacial dead layer during annealing as confirmed via high-angle annular dark field images and interfacial capacitance measurement. Hence, the reliability of ZrO2 MIM capacitors with a nine-cycle ZrN interfacial layer was examined with a negligible change in AFE and EC behaviors after a cycling endurance test of 106 cycles, exhibiting great potential for future applications in solid-state cooling.