Abstract
We report cryogenic inductively coupled plasma reactive ion etching (ICPRIE) etched tapered silicon microwires are ideal light trapping structures with extremely low (1.08% between 400 nm–1100 nm under normal incidence) reflectivity. We show that these tapered microwire arrays absorb 90.12% of incident light under normal incidence in an effectively 20 μm thick silicon when embedded in a polymer and peeled off the substrate, making them an attractive alternative for achieving high efficiency in thin film crystalline silicon solar cells. We show that microwave photoconductivity decay measurements as a simple quick way to measure carrier lifetimes in etched microwires under various liquid surface passivation techniques to estimate surface recombination velocities. The etched structures demonstrate >1 μs lifetimes.
Published Version
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