Abstract
Highly (110)- and (111)-oriented BiFeO3 (BFO) films were fabricated with BaPbO3 (BPO)∕Ru and BPO∕Pt∕Ru as electrode/barrier on Si substrates by rf-magnetron sputtering. The BPO∕Ru and BPO∕Pt∕Ru stacks both induce oriented BFO films and act as diffusion barriers. The (110)- and (111)-oriented BFO films possess excellent ferroelectric properties with only minor leakage. The values of remnant polarization are almost the same, about 42μC∕cm2, for (110)- and (111)-oriented BFO films. However, polarization measured under varying pulse widths demonstrates that the switching polarization in (111)-oriented BFO films is higher than in (110)-oriented films. Additionally, (111)-oriented BFO films exhibit better retention properties than (110)-oriented films.
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