Abstract
Highly (100)‐oriented 0.38Bi(Ni1/2Hf1/2)O3‐0.62PbTiO3 relaxor‐ferroelectric films were fabricated on Pt(111)/Ti/SiO2/Si(111) substrates by introducing a lead oxide seeding layer. A moderate relative permittivity , a low dissipation factor (tan δ < 5%), and strong relaxor‐like behavior (γ = 0.74) over a broad temperature region were observed. The energy storage density of approximately 45.1 ± 2.3 J/cm3 was achieved for films with (100) preferential orientation, which is much higher than the value ~33.5 ± 1.7 J/cm3 obtained from films with random orientation. Furthermore, the PbO‐seeded films are more capable of providing larger piezoelectric response (~113 ± 10 pm/V) compared to the films without seeds (~85 ± 8 pm/V). These excellent features indicate that the highly (100)‐oriented 0.38Bi(Ni1/2Hf1/2)O3‐0.62PbTiO3 films could be promising candidates for applications in high‐energy storage capacitors, high‐performance MEMS devices, and particularly for potential applications in the next‐generation integrated multifunctional piezoelectric energy harvesting and storage system.
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